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| HMC266 v02.0406 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Typical Applications The HMC266 is ideal for: * 23, 26, & 38 GHz Point-to-Point Radios Features Input IP3: Up to +17 dBm Sub-Harmonically Pumped (x2) LO Small Size: 1.32mm x 1.47mm 3 MIXERS - CHIP * LMDS * SATCOM Functional Diagram General Description The HMC266 chip is a broadband GaAs MMIC sub-harmonically pumped (x2) balanced passive mixer which can be used as an upconverter or downconverter in a small overall chip area of 1.9 mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. All data is with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). These devices are much smaller and more reliable than hybrid diode mixer designs. Electrical Specifications, TA = +25 C, LO Drive = +12 dBm IF = 1 GHz Parameter Min. Frequency Range, RF Frequency Range, LO Frequency Range, IF Conversion Loss Noise Figure (SSB) 2LO to RF Isolation LO to RF Isolation 2LO to IF Isolation RF to IF Isolation LO to IF Isolation IP3 (Input) 1 dB Compression (Input) 42 20 50 16 48 10 0 Typ. 20 - 40 10 - 20 1-3 12 12 52 24 60 22 55 13 +4 16 16 Max. GHz GHz GHz dB dB dB dB dB dB dB dBm dBm Units 3 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC266 v02.0406 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Conversion Gain vs. Temperature @ LO = +12 dBm 0 Isolation @ LO = +12 dBm 0 -10 LO/RF RF/IF CONVERSION GAIN (dB) ISOLATION (dB) -5 -55C +25C +85C -20 -30 -40 -50 -60 -70 -10 LO/IF 2LO/RF 3 MIXERS - CHIP 40 40 -15 2LO/IF -20 15 20 25 30 35 40 RF FREQUENCY (GHz) -80 15 20 25 30 35 40 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 0 Return Loss @ LO = +12 dBm 0 CONVERSION GAIN (dB) +12dBm +16dBm -10 +14dBm +10dBm RETURN LOSS (dB) -5 -5 -10 -15 -15 LO/RL RF/RL +8dBm -20 15 20 25 30 35 40 RF FREQUENCY (GHz) -20 0 5 10 15 20 25 30 35 FREQUENCY (GHz) IF Bandwidth @ LO = +12 dBm 0 Conversion Gain IF Return Loss Upconverter Performance Conversion Gain @ LO = +12 dBm 0 CONVERSION GAIN (dB) -5 CONVERSION GAIN (dB) 4 -5 -10 -10 -15 -15 -20 0 1 2 RF FREQUENCY (GHz) 3 -20 15 20 25 30 35 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 71 HMC266 v02.0406 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Input IP3 vs. Temperature @ LO = +12 dBm 20 Input IP3 vs. LO Drive 20 INPUT IP3 (dBm) 10 INPUT IP3 (dBm) +12 dBm +14 dBm +16 dBm 3 MIXERS - CHIP 15 15 10 5 5 -55C +25C +85C 0 20 25 30 RF FREQUENCY (GHz) 35 40 0 20 25 30 RF FREQUENCY (GHz) 35 40 Input IP2 vs. LO Drive 100 Input IP2 vs. Temperature @ LO = +12 dBm 100 INPUT IP2 (dBm) 90 INPUT IP2 (dBm) 95 +12 dBm +14 dBm +16 dBm 95 -55C +25C +85C 90 85 85 80 20 25 30 RF FREQUENCY (GHz) 35 40 80 20 25 30 RF FREQUENCY (GHz) 35 40 MxN Spurious Outputs as a Down Converter nLO mRF -3 -2 -1 0 1 2 3 63 69 79 67 50 29 70 1 23 x 66 19 63 6 5 4 3 2 1 0 P1dB vs. Temperature @ LO = +12 dBm 10 9 8 INPUT P1dB (dBm) 7 6 5 4 3 2 1 0 20 25 30 RF FREQUENCY (GHz) 35 40 -55C +25C +85C RF = 27 GHz @ -10 dBm LO = 13 GHz @ +12 dBm drive level All values in dBc below IF power level 3 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC266 v02.0406 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +23 dBm -65 to +150 C -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3 MIXERS - CHIP NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BOND PAD SPACING CENTER TO CENTER IS .006". 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Outline Drawing Die Packaging Information [1] Standard WP-3 Alternate [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 73 HMC266 v02.0406 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") 3 MIXERS - CHIP 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3 - 74 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC266 v02.0406 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Notes: 3 MIXERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 75 |
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